BAS16-LFR page: 1 frontier electronics corp. 667 e. cochran street, simi valley, ca 93065 tel: (805) 522-9998 fax: (805) 522-9989 e-mail: frontiersales@frontierusa.com web: http: //www.frontierusa.com surface mount switching diode BAS16-LFR features z fast switching z surface mount package ideally suited for automatic insertion z high conductance z lead free mechanical data z case: sot-23, plastic, d imensions in millimeters z terminals: solderable per mil-std-202, method 208 z polarity: see diagram z weight: 0.008 grams ratings symbol BAS16-LFR units non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 1) i fm 300 ma rectified current average ,half wave rectification with resist load at t amb 25 c and R 50mh z note 1 i o 150 ma non-repetitive peak forward surge current @ t=1.0 s @ t=1.0 s i fsm 1.0 2.0 a power dissipation note 1 derate above 25 c p d 350 2.8 mw mw/ c thermal resistance junction to ambient air note 1 r ja 357 c / w junction temperature t j - 55 to + 150 c storage temperature range t s - 55 to + 150 c marking a6 electrical characteristics @ t a =25 c unless otherwise specified characteristics symbol min. max. unit test condition maximum forward voltage v f - 715 855 1.0 1.25 mv mv v v i f =1.0 ma i f =10 ma i f =50 ma i f =150 ma maximum peak reverse current i rm - 1.0 50 30 a v r =75v v r =70v, t j =150 c v r =25v, t j =150 c capacitance c j - 4.0 pf v r =0, f=1.0mhz reverse recovery time t rr - 6.0 ns i f =10ma to i rr =1.0 ma v r =6.0v , r l =100 note: 1. diode on ceramic substrate 10mmx8 mmx0.7mm d b c a 2 3 1 g e h j k m l 3 1 dim min max a 0.30 0.51 b 1.20 1.60 c 2.10 3.00 d 0.85 1.05 e 0.45 1.00 g 1.70 2.10 h 2.70 3.10 j 0.00 0.13 k 0.89 1.30 l 0.30 0.61 m 0.076 0.25
BAS16-LFR page: 2 rating and characteristics curves BAS16-LFR fig.1 - forward characteristics i f , instantaneous forward current, (ma) 1000 100 10 1.0 0.1 0.01 t j =100 t j =25 0 1 2 instantaneous forward voltage (v) fig.2- leakage current vs junction temperature 0 100 200 junction temperature ( ) v r =20v i r , leakage current (na) 10,000 1000 100 10 1
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